(China (Mainland))
Product Summary
The CA3086E is a General Purpose NPN Transistor Array. It consists of five general-purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair. The transistors of the CA3086E are well suited to a wide variety of applications in low-power systems at frequencies from DC to 120MHz. It may be used as discrete transistors in conventional circuits. However, the CA3086E also provides the very significant inherent advantages unique to integrated circuits, such as compactness, ease of physical handling and thermal matching.
Parametrics
CA3086E absolute maximum ratings: (1)Collector-to-Emitter Voltage, VCEO: 15V; (2)Collector-to-Base Voltage, VCBO: 20V; (3)Collector-to-Substrate Voltage, VCIO: 20V; (4)Emitter-to-Base Voltage, VEBO: 5V; (5)Collector Current, IC: 50mA; (6)Temperature Range: -55℃ to 125℃.
Features
CA3086E electrical specifications: (1)Collector-to-Base Breakdown Voltage: 20 V at lC = 10μA, IE = 0; (2)Collector-to-Emitter Breakdown Voltage: 15 V at IC = 1mA, IB = 0; (3)Collector-to-Substrate Breakdown Voltage: 20 V at IC = 10μA, ICI = 0; (4)Emitter-to-Base Breakdown Voltage: 5 V min at IE = 10μA, IC = 0; (5)Collector-Cutoff Current: 0.002 to 100 nA at VCB = 10V, IE = 0.
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